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Datasheet RD09MUP2 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RD09MUP2 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
(a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION
RD09MUP2 is a MOS F | Mitsubishi Electric | mosfet |
RD0 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RD00HHS1 | RoHS Compliance MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 3
1.5+/-0.1
0. 1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specific Mitsubishi Electric data | | |
2 | RD00HVS1 | RoHS Compliance MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HVS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers appl Mitsubishi Electric data | | |
3 | RD0106T | High-Speed Switching Diode www.DataSheet.co.kr
Ordering number : ENA1704
RD0106T
SANYO Semiconductors
DATA SHEET
RD0106T
Features
• • • • •
Diffused Junction Silicon Diode
Low VF • High-Speed Switching Diode
High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Sanyo Semicon Device diode | | |
4 | RD01MUS1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS1
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS1 is a MOS FET type transistor speci Mitsubishi Electric mosfet | | |
5 | RD01MUS2 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD01MUS2
4.4+/-0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
1.5+/-0.1
RD01MUS2 is a MOS FET type transistor speci Mitsubishi Electric mosfet | | |
6 | RD01MUS2B | Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) >
RD01MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic zener diode from gate Mitsubishi Electric Semiconductor mosfet | | |
7 | RD02MUS1 | Silicon MOSFET Power Transistor
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD02MUS1
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UH Mitsubishi Electric mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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