Datasheet RD0106T Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RD0106T	High-Speed Switching Diode www.DataSheet.co.kr Ordering number : ENA1704 RD0106T SANYO Semiconductors DATA SHEET RD0106T Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V).	Sanyo Semicon Device

RD01 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RD01MUS1	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET t	Mitsubishi Electric
RD01MUS2B	Silicon MOSFET Power Transistor < Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device has an internal monolithic ze	Mitsubishi Electric Semiconductor
RD01MUS2	Silicon MOSFET Power Transistor MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS2 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS2 is a MOS FET t	Mitsubishi Electric

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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