RCM1381U-A データシート PDFこの部品の機能は「24 X 24 Dots MultIColored Largesized Liquid Crystal Display Unit」です。 |
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部品番号 |
RCM1381U-A 24 x 24 dots multicolored largesized liquid crystal display unit Liquid crystal displays 24 24 dots multicolored largesized liquid crystal display unit RCM1381U-A Thanks to the high contrast and wide viewing angle of the RCM1381U-A, which is provided by its unique ROHM Semiconductor |
文字列「 RCM1381 」「 1381U 」で始まる検索結果です。 |
部品説明 |
2SA1381 High-Definition CRT Display/ Video Output Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitanc Sanyo Semicon Device |
2SA1381 PNP Epitaxial Silicon Transistor 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor March 2008 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Volta Fairchild Semiconductor |
2SB1381 TRANSISTOR (HIGH POWER SWITCHING/ HAMMER DRIVE/ PULSE MOTOR DRIVE APPLICATIONS) Toshiba Semiconductor |
2SB1381 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2079 ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·High power switching applications · SavantIC |
2SD1381F Power Transistor (80V/ 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB118 ROHM Semiconductor |
2SK1381 N-CHANNEL MOS TYPE TRANSISTOR 2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittan Toshiba Semiconductor |
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