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Datasheet RBV2508 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RBV2508 | Silicon Bridge Rectifiers Production specification
Silicon Bridge Rectifiers
RBV25005--RBV2510
FEATURES
Rating to 1000V PRV Surge overload rating to 300 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded
Pb
Lead-free
plastic technique results in inexpensive prod |  Galaxy Microelectronics | rectifier |
| 2 | RBV2508 | Silicon Bridge Rectifiers RBV25005-RBV2510
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A
Features
Rating to 1000V PRV Surge overload rating to 200 Am peres peak Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product Lead |  LGE | rectifier |
| 3 | RBV2508 | SILICON BRIDGE RECTIFIERS RBV2500 - RBV2510
PRV : 50 - 1000 Volts Io : 25 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipation |  EIC discrete Semiconductors | rectifier |
| 4 | RBV2508D | SILICON BRIDGE RECTIFIERS RBV2500D - RBV2510D
PRV : 50 - 1000 Volts Io : 25 Amperes
FEATURES :
* * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 V DC Ideal for printed circuit board Very good heat dissipati | EIC discrete Semiconductors | rectifier |
RBV Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RBV-1004B | Bridge Diodes (Schottky Barrier) Bridge Diodes (Schottky Barrier)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Tj (°C) Tstg (°C) VF (V) max per element Electrical Characteristics (Ta = 25°C) IR (mA) VR = VRM
max per element
Others Rth ( j-c) IF /IRP (mA) (°C/ W) Mass Fig. (g)
50Hz With Half-cycle  Sanken electric diode | | |
| 2 | RBV-1306 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 3 | RBV-1506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 4 | RBV-1506S | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 5 | RBV-2506 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth ( j-c) (°C/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 6 | RBV-401 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | | |
| 7 | RBV-402 | Bridge Diodes Bridge Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A)
With Heatsink
Electrical Characteristics (Ta = 25°C) Tstg (ºC) VF (V) max per IF element (A) IR (µA) VR = VRM IR (H) (µA) VR=VRM, Tj=100°C Rth (j-c) (ºC/ W)
Others Mass Fig. (g)
IFSM (A)
50Hz Half-cycle Sinewave Sanken electric diode | |
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