RBV-606 データシート PDFこの部品の機能は「Bridge Diodes」です。 |
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部品番号 |
RBV-606 Bridge Diodes Bridge Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A) Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max per element IF (A) IR (µA) VR = VRM Sanken electric |
文字列「 RBV606 」「 RBV- 」で始まる検索結果です。 |
部品説明 |
RBV606 Silicon Bridge Rectifiers Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 200 amperes peak RBV6005-RBV610 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 6.0 A KBJ 30± 0.3 3 .2± 0.15 4.7± 0.25 3.7± 0.2 LGE |
RBV606 Silicon Bridge Rectifiers Production specification Silicon Bridge Rectifiers FEATURES z Ideal for printed circuit board z Reliable low cost construction utilizing molded plastic technique results in inexpensive product z Surge overload rating: 200 amperes peak RBV6005--RBV610 Pb Lead-free Maximum Ratin Galaxy Microelectronics |
RBV606 SILICON BRIDGE RECTIFIERS RBV600 - RBV610 PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC Ideal for printed circuit board Very goo EIC discrete Semiconductors |
RBV606 Diode ( Rectifier ) American Microsemiconductor |
RBV606D SILICON BRIDGE RECTIFIERS RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes C3 RBV25 3.9 ± 0.2 30 ± 0.3 4.9 ± 0.2 ∅3.2 ± 0.1 20 ± 0.3 FEATURES : * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward EIC discrete Semiconductors |
RBV606G 6.0A BRIDGE RECTIFIERS Leshan Radio Company |
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