R-6XXXXD データシート PDFこの部品の機能は「1-2 Amp Sip12 VertICal & Horizontal」です。 |
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部品番号 |
R-6XXXXD 1-2 AMP SIP12 Vertical & Horizontal Features ● ● ● ● ● ● ● ● Adjustable Output Voltage Non-Isolated 1-2AMP Adjustable Positive Step Down Integrated Switching Regulator Internal Short Circuit Protection ON/OFF Control(G Recom |
文字列「 R6 」「 R-6X 」で始まる検索結果です。 |
部品説明 |
R600 General Purpose Rectifier (200-300 Amperes Average 1400-2600 Volts) Powerex Power Semiconductors |
R6000F 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts MCC Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST R3500F THRU R6000F 0.2mA Fast Recovery High Voltage Rectifier 3500 - 6000 Volts DO-15 Maximum DC Blocking Voltage D • • Maximum Ratings Operating Temp Micro Commercial Components |
R6004CND 10V Drive Nch MOSFET Data Sheet
10V Drive Nch MOSFET
R6004CND
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63) ROHM Semiconductor |
R6004END Nch 600V 4A Power MOSFET R6004END Nch 600V 4A Power MOSFET Datasheet VDSS 600V lOutline TO-252 RDS(on)(Max.) 0.98Ω SC-63 ID ±4.0A CPT3 PD lFeatures 58W lInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guar ROHM Semiconductor |
R6004ENX Nch 600V 4A Power MOSFET R6004ENX Nch 600V 4A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD lFeatures 1) Low on-resistance. 600V 980mW 4A 40W lOutline TO-220FM lInner circuit (1) (2) (3) 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be si ROHM Semiconductor |
R6004KND Nch 600V 4A Power MOSFET R6004KND Nch 600V 4A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.98Ω ±4.0A 58W lFeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant. lOutline TO-252 SC-63 CPT3 lInner c ROHM Semiconductor |
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