QLF1335-T200 データシート PDFこの部品の機能は「1310 Nm Fp Laser To-can」です。 |
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部品番号 |
QLF1335-T200 1310 nm FP LASER TO-CAN QLF1335-T200 1310 nm FP LASER TO-CAN Preliminary C00110-01 May. 2013 1. DESCRIPTION The QLF1335-T200 is 1310 nm quantum dot laser diode device for use in extremely high temperature environment. The QD Laser |
文字列「 QLF1335T200 」「 1335 」で始まる検索結果です。 |
部品説明 |
2SB1335 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1335 · DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1855 ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING SavantIC |
2SC1335 LOW FREQUENCY LOW NOISE AMPLIFIER ETC |
2SK1335 Silicon N-Channel MOS FET 2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G Hitachi Semiconductor |
2SK1335L Silicon N-Channel MOS FET 2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G Hitachi Semiconductor |
2SK1335S Silicon N-Channel MOS FET 2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G Hitachi Semiconductor |
A1335 Precision Hall-Effect Angle Sensor IC A1335 Precision Hall-Effect Angle Sensor IC with I 2C, SPI, and SENT Interfaces FEATURES AND BENEFITS • 360° contactless high-resolution angle position sensor • CVH (Circular Vertical Hall) technology • Available with either a single die or dual independent die house Allegro |
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