Datasheet Q62702-C150 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	Q62702-C150	PNP SILICON TRANSISTOR	Siemens Semiconductor Group	transistor
2	Q62702-C1501	NPN Silicon Darlington Transistors (For general AF applications High collector current) NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Packa	Siemens Semiconductor Group	transistor
3	Q62702-C1502	PNP Silicon AF Transistors PNP Silicon AF Transistors BCX 51 ... BCX 53 Features For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCX 54 … BCX 56 (NPN) q Type BCX 51 BCX 51-10 BCX 51-16 BCX 52 BCX 52-10 BCX 52-16 BCX 53 BCX 53-10 BCX 53-16 Marking	Siemens Semiconductor Group	transistor
4	Q62702-C1504	PNP Silicon AF Transistors (For general AF applications High collector current High current gain) PNP Silicon AF Transistors BC 807 BC 808 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN) Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-25 BC 808-40 Marking 5As 5Bs 5Cs 5Es 5Fs	Siemens Semiconductor Group	transistor
5	Q62702-C1505	NPN Silicon AF Transistors NPN Silicon AF Transistors BC 817 BC 818 q q q q q For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 807, BC 808 (PNP) Type BC 817-16 BC 817-25 BC 817-40 BC 818-16 BC 818-25 BC 818-40 Marking 6As 6Bs 6Cs 6Es 6Fs	Siemens Semiconductor Group	transistor

Q62 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	Q62607-S60	Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Montage durch Schraube/Mu	Siemens Semiconductor Group	data
2	Q62607-S61	Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P Silizium-Fotoelement Silicon Photovoltaic Cell TP 61 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm q Kathode = Chipunterseite q Mit feuchtigkeitsabweisen	Siemens Semiconductor Group	data
3	Q627002G0078	GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) CGY 81 GaAs MMIC l l l l l Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones 31 dBm saturated output power @ PAE=55% typ. 29 dBm linear output power@ PAE=40% typ. Fully integrated 2 stage amplifier Power ramp control Input matched to 50 ohms, simple output match ESD: Electros	Siemens Semiconductor Group	amplifier
4	Q62701-F51	PNP GERMANIUM RF TRANSISTOR	Siemens Semiconductor Group	transistor
5	Q62701-F72	PNP GERMANIUM RF TRANSISTOR	Siemens Semiconductor Group	transistor
6	Q62701-F88	PNP GERMANIUM RHF TRANSISTOR	Siemens Semiconductor Group	transistor
7	Q62701-F92	PNP GERMANIUM UHF TRANSISTOR	Siemens Semiconductor Group	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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