Q60215-Y111-S4 データシート PDFこの部品の機能は「Silizium-fotoelement SilICon PhotovoltaIC Cell」です。 |
検索結果を表示する |
部品番号 |
Q60215-Y111-S4 Silizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Silizium-Fotoelement Silicon Photovoltaic Cell BPY 11 P Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fü Siemens Semiconductor Group |
文字列「 Q60215Y111S4 」「 60215 」で始まる検索結果です。 |
部品説明 |
IDT71V67602150BG 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
IDT71V67602150BGI 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
IDT71V67602150BQ 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
IDT71V67602150BQI 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
IDT71V67602150PF 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
IDT71V67602150PFI 256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect x x IDT71V67602 IDT71V67802 Features 256K x 36, 512K x 18 memory configurations Supports high system speed: – 166MHz 3.5ns clock access time – 150MHz 3.8ns clock acc Integrated Device Technology |
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