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Datasheet PZ28F032M29EWHA Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PZ28F032M29EWHA | Parallel NOR Flash Embedded Memory 32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features
• Supply voltage – VCC = 2.7–3.6V (progr |  Micron | data |
PZ2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PZ2003EEA | P-Channel Enhancement Mode MOSFET PZ2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -28A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS �  UNIKC mosfet | | |
| 2 | PZ2003EV | P-Channel Enhancement Mode MOSFET PZ2003EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -8A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20 UNIKC mosfet | | |
| 3 | PZ2024B20U | NPN microwave power transistors NXP Semiconductors transistor | | |
| 4 | PZ20S | Diode, Rectifier American Microsemiconductor diode | | |
| 5 | PZ2103NV | P&N-Channel Enhancement Mode MOSFET PZ2103NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 21mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel 8A N -6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 V UNIKC mosfet | | |
| 6 | PZ2503HV | N-Channel Enhancement Mode MOSFET PZ2503HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 25mΩ @VGS = 10V
ID 6.2A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±16
Continuous D UNIKC mosfet | | |
| 7 | PZ2806HV | N-Channel Enhancement Mode MOSFET PZ2806HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 32mΩ @VGS = 10V
ID 6A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Dra UNIKC mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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