Datasheet PYA28C256 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PYA28C256	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times PYA28C256 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs	PYRAMID

PYA28C Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PYA28C64B	STATIC CMOS RAM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible	PYRAMID
PYA28C16	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Fast Byte Write (200µs or 1 ms) Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16 2K	PYRAMID
PYA28C256	EEPROM FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 60 mA Active Current - 300 µA Standby Current Fast Write Cycle Times PYA28C256 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible	PYRAMID

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Número de pieza	Descripción	Fabricantes	PDF
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