PTH12060Y データシート PDFこの部品の機能は「Dc-dc / Non-isolated Pola Memory」です。 |
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部品番号 |
PTH12060Y DC-DC / Non-Isolated POLA memory Embedded Power for Business-Critical Continuity PTHxx060Y 3.3/5/12 Vin Total Power: # of Outputs: 18 Watts Single Rev.3.10.09_171 PTHxx060Y of 5 Special Features • VTT bus termination output Emerson |
文字列「 PTH12060 」「 12060Y 」で始まる検索結果です。 |
部品説明 |
PTH12060L 10 A 12-V Input Non-Isolated Step-Down Switching Power Module (Rev. H) Texas Instruments |
PTH12060L DC-DC / Non-Isolated POLA 12 Vin single output DC/DC CONVERTERS POLA Non-isolated NEW Product 1 • 10 A output current • 12 V input voltage • Wide-output voltage adjust • 1.2 Vdc to 5.5 Vdc for suffix ‘W’ and 0.8 Vdc to 1.8 Vdc for suffix ‘L’ • Auto-track™ sequencing* • Margin up/down Emerson |
PTH12060W 10 A 12-V Input Non-Isolated Step-Down Switching Power Module (Rev. H) Texas Instruments |
PTH12060W DC-DC / Non-Isolated POLA 12 Vin single output DC/DC CONVERTERS POLA Non-isolated NEW Product 1 • 10 A output current • 12 V input voltage • Wide-output voltage adjust • 1.2 Vdc to 5.5 Vdc for suffix ‘W’ and 0.8 Vdc to 1.8 Vdc for suffix ‘L’ • Auto-track™ sequencing* • Margin up/down Emerson |
APT12060B2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT12060B2VR APT12060LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching Advanced Power Technology |
APT12060LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT12060B2VR APT12060LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching Advanced Power Technology |
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