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Datasheet PTFC270051M Equivalent ( PDF )

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1 PTFC270051M   High Power RF LDMOS Field Effect Transistor

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linear
Infineon
Infineon
datasheet PTFC270051M pdf

PTFC2700 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PTFC270051M

High Power RF LDMOS Field Effect Transistor

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, ef
Infineon
Infineon
datasheet pdf - Infineon


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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