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Datasheet PTFC262157FH Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PTFC262157FH   Thermally-Enhanced High Power RF LDMOS FET

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance
Infineon
Infineon
datasheet PTFC262157FH pdf

PTFC26215 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PTFC262157FH

Thermally-Enhanced High Power RF LDMOS FET

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz Description The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for
Infineon
Infineon
datasheet pdf - Infineon


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