Datasheet PTFB241402F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFB241402F	High Power RF LDMOS Field Effect Transistor PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s adv	Infineon Technologies

PTFB2414 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFB241402F	High Power RF LDMOS Field Effect Transistor PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured w	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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