Datasheet PTFB213004F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFB213004F	High Power RF LDMOS Field Effect Transistor PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a	Infineon

PTFB2130 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFB213004F	High Power RF LDMOS Field Effect Transistor PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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