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Datasheet PTFB212507SH Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | PTFB212507SH | Thermally-Enhanced High Power RF LDMOS FET PTFB212507SH
Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz
Description
The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, h |
Infineon |
PTFB21250 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFB212503EL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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PTFB212507SH | Thermally-Enhanced High Power RF LDMOS FET |
Infineon |
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PTFB212503FL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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