|
|
Datasheet PTFB201402FC Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | PTFB201402FC | High Power RF LDMOS Field Effect Transistor PTFB201402FC
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band. Man |
Infineon |
PTFB20140 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTFB201402FC | High Power RF LDMOS Field Effect Transistor |
Infineon |
Esta página es del resultado de búsqueda del PTFB201402FC. Si pulsa el resultado de búsqueda de PTFB201402FC se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |