Datasheet PTFB183408SV Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFB183408SV	High Power RF LDMOS Field Effect Transistor PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,	Infineon Technologies

PTFB18340 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFB183404F	High Power RF LDMOS Field Effect Transistors PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Fea	Infineon
PTFB183404E	High Power RF LDMOS Field Effect Transistors PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Fea	Infineon
PTFB183408SV	High Power RF LDMOS Field Effect Transistor PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 1805 to 1880 MHz frequency band. Features include input	Infineon Technologies

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Número de pieza	Descripción	Fabricantes	PDF
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