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Datasheet PTFB091802FC Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PTFB091802FC   Thermally-Enhanced High Power RF LDMOS FET

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package with earless flange.
Infineon
Infineon
datasheet PTFB091802FC pdf

PTFB09180 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PTFB091802FC

Thermally-Enhanced High Power RF LDMOS FET

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in power amplifier applications in the 920 MHz to 960 MHz frequency band. Features include high gain and a thermally-enhanced package
Infineon
Infineon
datasheet pdf - Infineon


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Número de pieza Descripción Fabricantes PDF
SPS122

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