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Datasheet PTFA210701F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PTFA210701F | Thermally-Enhanced High Power RF LDMOS FET Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz
PTFA210701E PTFA210701F
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 |  Infineon | data |
PTF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PTF | Metal Film Resistors www.vishay.com
PTF
Vishay Dale
Metal Film Resistors, High Precision, High Stability
FEATURES
• Extremely low temperature coefficient of resistance
• Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat  Vishay data | | |
| 2 | PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
| 3 | PTF080101S | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
| 4 | PTF080451 | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
| 5 | PTF080451E | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
| 6 | PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | | |
| 7 | PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | |
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