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Datasheet PTFA091201E Equivalent ( PDF ) |
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| 1 | PTFA091201E | Thermally-Enhanced High Power RF LDMOS FETs PTFA091201E PTFA091201F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz
Description
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band. Feat |
 Infineon |
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PTFA0912 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| PTFA091203EL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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| PTFA091201F | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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| PTFA091201HL | Thermally-Enhanced High Power RF LDMOS FETs |
Infineon |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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