Datasheet PTFA081501E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTFA081501E	Thermally-Enhanced High Power RF LDMOS FETs PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation fr	Infineon

PTFA0815 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTFA081501F	Thermally-Enhanced High Power RF LDMOS FETs PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and C	Infineon
PTFA081501E	Thermally-Enhanced High Power RF LDMOS FETs PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and C	Infineon

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Número de pieza	Descripción	Fabricantes	PDF
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