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Datasheet PTFA043002E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PTFA043002E | Thermally-Enhanced High Power RF LDMOS FETs PTFA043002E
Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz
Description
The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS ® push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The thermall | Infineon | data |
PTF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PTF | Metal Film Resistors www.vishay.com
PTF
Vishay Dale
Metal Film Resistors, High Precision, High Stability
FEATURES
• Extremely low temperature coefficient of resistance
• Very low noise and voltage coefficient • Very good high frequency characteristics • Can replace wirewound bobbins • Proprietary epoxy coat Vishay data | | |
2 | PTF080101 | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
3 | PTF080101S | LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon Technologies AG transistor | | |
4 | PTF080451 | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
5 | PTF080451E | LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B Infineon Technologies AG transistor | | |
6 | PTF080601 | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | | |
7 | PTF080601A | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typ Infineon Technologies AG transistor | |
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