Datasheet PTF211802A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PTF211802A	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and	Infineon Technologies AG

PTF2118 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PTF211802E	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent	Infineon Technologies AG
PTF211802A	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent	Infineon Technologies AG
PTF211802	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent	Infineon Technologies AG

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Número de pieza	Descripción	Fabricantes	PDF
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