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Datasheet PTF211802 Equivalent ( PDF ) |
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3 | PTF211802 | LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and |
Infineon Technologies AG |
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2 | PTF211802A | LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and |
Infineon Technologies AG |
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1 | PTF211802E | LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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