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Datasheet PTF180901E Equivalent ( PDF ) |
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1 | PTF180901E | GSM/EDGE RF Power FET Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal |
Infineon Technologies AG |
PTF1809 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PTF180901F | GSM/EDGE RF Power FET |
Infineon Technologies AG |
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PTF180901E | GSM/EDGE RF Power FET |
Infineon Technologies AG |
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Sanken |
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