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PTF10007 データシート PDF

この部品の機能は「35 Watts/ 1.0 Ghz Goldmos Field Effect Transistor」です。


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部品番号
PTF10007

35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor


PTF 10007 35 Watts, 1.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% effici


Ericsson
Ericsson

データシート pdf



文字列「 PTF10007 」「 10007 」で始まる検索結果です。

部品説明

MJ10007

10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10007/D Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in indu

Motorola  Inc
Motorola Inc

 データシート pdf


MJ10007

NPN SILICON POWER DARLINGTON TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10007/D Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10007 Darlington transistor is designed for high–voltage, high–speed, power switching in indu

ON Semiconductor
ON Semiconductor

 データシート pdf


MJ10007

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

MJ10007 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature

Wing Shing Computer Components
Wing Shing Computer Components

 データシート pdf


MJ10007

POWER TRANSISTORS(10A/350-400V/150W)

A A A A

Mospec Semiconductor
Mospec Semiconductor

 データシート pdf


MJ10007

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE

Boca Semiconductor Corporation
Boca Semiconductor Corporation

 データシート pdf


MRA10007L

UHF POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRA1000–7L/D The RF Line UHF Power Transistor . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf

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