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Datasheet PTF080901 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | PTF080901 | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B |
Infineon Technologies AG |
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2 | PTF080901E | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B |
Infineon Technologies AG |
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1 | PTF080901F | LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Features
• • B |
Infineon Technologies AG |
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Número de pieza | Descripción | Fabricantes | |
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