PTB20080 データシート PDFこの部品の機能は「25 Watts/ 1.6-1.7 Ghz Rf Power Transistor」です。 |
検索結果を表示する |
部品番号 |
PTB20080 25 Watts/ 1.6-1.7 GHz RF Power Transistor e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from Ericsson |
文字列「 PTB20080 」「 20080 」で始まる検索結果です。 |
部品説明 |
CPT20080 Schottky PowerMod Microsemi Corporation |
MBR20080 200 Amp Rectifier 20 to 100 Volts Schottky Barrier MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR20020 THRU MBR200100 200 Amp Schottky Barrier Rectifier 20 to 100 Volts HALF PACK D Metal of siliconrectifier, majonty carrier con Micro Commercial Components |
MBR20080CT 200 Amp Rectifier 20 to 100 Volts Schottky Barrier MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR20020CT THRU MBR200100CT 200 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier c Micro Commercial Components |
MBR20080CT Schottky Rectifier ( Diode ) Bulletin PD-2.321 rev. I 08/02 MBR20...CT MBRB20...CT MBR20...CT-1 SCHOTTKY RECTIFIER 20 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform (Per Device) IFRM @ TC = 133°C (Per Leg) VRRM IFSM @ tp = 5 µs sine VF TJ @ 10 Apk, TJ = 125°C range 20 International Rectifier |
MBR20080CT (MBR20045CT - MBR200100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P Naina Semiconductor |
MBR20080CT (MBR20045CT - MBR200100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |