Datasheet PTA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PTA	Low Profile Slide Potentiometer IA NT Features ■ ■ ■ ■ ■ ■ ■ Applications ■ ■ ■ ■ ■ Carbon element Metal housing 15-60 mm travel Single and dual gang Center detent option Dust cover option RoHS compliant* Audio/TV sets Car radio Amplifiers/mixers/drum machines/ synthesizers PCs/mon	Bourns Electronic Solutions	data
2	PTAC210802FC	Thermally-Enhanced High Power RF LDMOS FET PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include d	Infineon	data
3	PTAC240502FC	Thermally-Enhanced High Power RF LDMOS FET PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include du	Infineon	data
4	PTAC260302FC	Thermally-Enhanced High Power RF LDMOS FET PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W	Infineon	data
5	PTAC260302SC	Thermally-Enhanced High Power RF LDMOS FET PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302SC is a 30-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-	Infineon	data

PTA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PTA	Low Profile Slide Potentiometer IA NT Features ■ ■ ■ ■ ■ ■ ■ Applications ■ ■ ■ ■ ■ Carbon element Metal housing 15-60 mm travel Single and dual gang Center detent option Dust cover option RoHS compliant* Audio/TV sets Car radio Amplifiers/mixers/drum machines/ synthesizers PCs/mon	Bourns Electronic Solutions	data
2	PTAC210802FC	Thermally-Enhanced High Power RF LDMOS FET PTAC210802FC Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include d	Infineon	data
3	PTAC240502FC	Thermally-Enhanced High Power RF LDMOS FET PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Description The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include du	Infineon	data
4	PTAC260302FC	Thermally-Enhanced High Power RF LDMOS FET PTAC260302FC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W	Infineon	data
5	PTAC260302SC	Thermally-Enhanced High Power RF LDMOS FET PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302SC is a 30-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-	Infineon	data

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Número de pieza	Descripción	Fabricantes	PDF
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