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Datasheet PSMN038 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | PSMN038 | N-channel enhancement mode field-effect transistor PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001 Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. Product availabil |
 Philips |
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| 2 | PSMN038-100K | N-channel enhancement mode field-effect transistor
PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001 Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) packa |
 NXP Semiconductors |
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| 1 | PSMN038-100YL | N-channel MOSFET LFPAK56
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide ra |
NXP Semiconductors |
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