PSF21150 データシート PDFこの部品の機能は「Ipac-x Isdn Pc Adapter Circuit」です。 |
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部品番号 |
PSF21150 IPAC-X ISDN PC ADAPTER CIRCUIT Data Sheet, DS1, Jan. 2003 IPAC-X ISDN PC Adapter Circuit PSB/PSF 21150, V 1.4 Wired Communications Never stop thinking. ABM®, ACE®, AOP®, ARCOFI®, ASM®, ASP®, DigiTape®, DuSLIC®, EPIC®, ELI Infineon Technologies |
文字列「 PSF21150 」「 21150 」で始まる検索結果です。 |
部品説明 |
MRF5S21150HR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDM Freescale Semiconductor |
MRF5S21150HSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDM Freescale Semiconductor |
MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applicatio Motorola Inc |
MRF5S21150SR3 RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D The RF MOSFET Line RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3 Designed for W- CDMA base station applicatio Motorola Inc |
MRF7S21150HR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitabl Freescale Semiconductor |
MRF7S21150HSR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitabl Freescale Semiconductor |
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