PQ05TZ51 データシート PDFこの部品の機能は「Low Power-loss Voltage Regulators With Off-state Low Dissipation Current」です。 |
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部品番号 |
PQ05TZ51 Low Power-Loss Voltage Regulators with OFF-state Low Dissipation Current Low Power-Loss Voltage Regulators PQ05TZ51/PQ05TZ11 Series PQ05TZ51/PQ05TZ11 Series Low Power-Loss Voltage Regulators with OFF-state Low Dissipation Current s Features ¡Low power-loss (Dropout volt Sharp |
文字列「 PQ05TZ51 」「 05TZ51 」で始まる検索結果です。 |
部品説明 |
ASI10551 NPN SILICON RF POWER TRANSISTOR AVD0.5P NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L PILL DESCRIPTION: The ASI AVD0.5P is Designed for A S D FEATURES: • • • Omnigold™ Metalization System ØB G S ØC D MAXIMUM RATINGS IC VCE PDISS TJ TSTG θ JC O E F 300 mA DIM MINIMUM inches / mm M Advanced Semiconductor |
BDJ0551HFV Thermostat Output Temperature Sensor ICs Small and high accuracy Temperature Sensor IC Series High Accuracy detection Thermostat Output Temperature Sensor ICs with Power Down Function BDJ□□□1HFV Series No.09047ECT01 ●Description BDJ□□□1HFV series is thermostat output temperature sensor IC with built-in t ROHM Semiconductor |
HD10551 Prescaler for Digital Tuning System Be shure to visit ChipDocs for more information http://www.chipdocs.com site Be shure to visit ChipDocs for more information http://www.chipdocs.com site Be shure to visit ChipDocs for more information http://www.chipdocs.com site Be shure to visit ChipDocs for more informa Hitachi Semiconductor |
IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No. PD60160-A IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown 5.2mΩ (max) 40V 100A 4µs International Rectifier |
IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Data Sheet No. PD60160-A IPS0551T FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown 5.2mΩ (max) 40V 100A 4µs International Rectifier |
PTFA080551E Thermally-Enhanced High Power RF LDMOS FETs PTFA080551E PTFA080551F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz Description The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz Infineon |
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