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Datasheet PNZ150L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PNZ150L | Silicon NPN Phototransistor Phototransistors
PNZ150L
Silicon NPN Phototransistor
Unit : mm
ø3.5±0.2
4.8±0.3 2.4 2.4 Not soldered
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package
4.5±0.3
4.2±0.3 2.3 1 |  Panasonic Semiconductor | transistor |
PNZ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PNZ0300 | Silicon PIN Photodiodes PIN Photodiodes
PNZ0300, PNZ300F
Silicon PIN Photodiodes
PNZ0300
ø4.6±0.15 Glass lens
Unit : mm
For optical control systems Features
Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity a Panasonic Semiconductor diode | | |
| 2 | PNZ102F | Silicon NPN Phototransistors Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
PNA1401LF
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sens Panasonic Semiconductor transistor | | |
| 3 | PNZ107F | Silicon NPN Phototransistors Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
PNZ107F
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability Panasonic Semiconductor transistor | | |
| 4 | PNZ108CL | Silicon NPN Phototransistor Phototransistors
PNZ108CL
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin
1. 0± 0. 15
3.0±0.3 1 Panasonic Semiconductor transistor | | |
| 5 | PNZ108F | Silicon NPN Phototransistors Phototransistors
PNZ107F, PNZ108F
Silicon NPN Phototransistors
PNZ107F
Unit : mm
ø4.6±0.15 Glass window
For optical control systems Features
Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) Signal mixing capability Panasonic Semiconductor transistor | | |
| 6 | PNZ109CL | Silicon NPN Phototransistor Phototransistors
PNZ109CL
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin
1. 0± 0. 15
3.0±0.3 12. Panasonic Semiconductor transistor | | |
| 7 | PNZ109F | Silicon NPN Phototransistor Phototransistors
PNZ109F
Silicon NPN Phototransistor
Unit : mm
For optical control systems Features
Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting device Panasonic Semiconductor transistor | |
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