Datasheet PMZ350UPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PMZ350UPE	P-channel Trench MOSFET SOT883 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and	NXP Semiconductors

PMZ350 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PMZ350XN	N-channel TrenchMOS standard level FET PMZ350XN N-channel TrenchMOS standard level FET Rev. 01 — 21 February 2008 BOTTOM VIEW Product data sheet 1. Product proﬁle 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features I Pro	NXP Semiconductors
PMZ350UPE	P-channel Trench MOSFET SOT883 PMZ350UPE 20 V, P-channel Trench MOSFET 14 May 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technolog	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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