PMD19D100 データシート PDFこの部品の機能は「Trans Gp Bjt PNP 60v 30a 3-pin(2+tab) To-3 Sleeve」です。 |
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部品番号 |
PMD19D100 Trans GP BJT PNP 60V 30A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor |
文字列「 PMD19D100 」「 19D100 」で始まる検索結果です。 |
部品説明 |
EM19100 8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS) EM19100 EM19100 8-BIT 20 8-BITVIDEO 20 MSPS A/D VIDEO A/D CONVERTER (CMOS) MSPS CONVERTER (CMOS) GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS ELAN Microelectronics Corp |
EM19100M 8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS) EM19100 EM19100 8-BIT 20 8-BITVIDEO 20 MSPS A/D VIDEO A/D CONVERTER (CMOS) MSPS CONVERTER (CMOS) GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS ELAN Microelectronics Corp |
EM19100S 8-BIT 20 MSPS VIDEO A/D CONVERTER (CMOS) EM19100 EM19100 8-BIT 20 8-BITVIDEO 20 MSPS A/D VIDEO A/D CONVERTER (CMOS) MSPS CONVERTER (CMOS) GENERAL DESCRIPTION EM19100 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS ELAN Microelectronics Corp |
MRF5S19100HR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. S Motorola Semiconductors |
MRF5S19100HSR3 The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. S Motorola Semiconductors |
MRF6S19100HR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA an Freescale Semiconductor |
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