PM15CNJ060 データシート PDFこの部品の機能は「Igbt Intelligent Module」です。 |
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部品番号 |
PM15CNJ060 IGBT INTELLIGENT MODULE MITSUBISHI Mitsubishi Electric |
文字列「 PM15CNJ060 」「 15CNJ060 」で始まる検索結果です。 |
部品説明 |
MRF15060 RF POWER BIPOLAR TRANSISTORS ( DataSheet : ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The h Motorola Semiconductors |
MRF15060S RF POWER BIPOLAR TRANSISTORS ( DataSheet : ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The h Motorola Semiconductors |
MSRT15060 (MSRT15060 - MSRT150100A) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
MSRT15060A (MSRT15060 - MSRT150100A) Silicon Standard Recovery Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ America Semiconductor |
RHRU15060 150A/ 600V Hyperfast Diode RHRU15060 Data Sheet January 2000 File Number 3089.3 150A, 600V Hyperfast Diode The RHRU15060 is a hyperfast diode with soft recovery characteristics (trr < 60ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial plan Intersil Corporation |
RURU15060 150A/ 600V Ultrafast Diode RURU15060 Data Sheet January 2000 File Number 3201.3 150A, 600V Ultrafast Diode The RURU15060 is an ultrafast diode with soft recovery characteristics (trr < 85ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. Intersil Corporation |
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