Datasheet PJW4N10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PJW4N10	100V N-Channel MOSFET PPJW4N10 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 4A SOT-223 Features  RDS(ON), VGS@10V,ID@2A<258mΩ  RDS(ON), VGS@6V,ID@1A<268mΩ  Low On-Resistance  Low input capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound	Pan Jit International

PJW4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PJW4P06A	600V P-Channel MOSFET PPJW4P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -4.0 A SOT-223 Features  RDS(ON), VGS@-10V,[email protected]<110mΩ  RDS(ON), [email protected],[email protected] A<130mΩ  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer c	Pan Jit International
PJW4N06A	60V N-Channel MOSFET PPJW4N06A 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 4.0 A SOT-223 Features  RDS(ON), VGS@10V,[email protected]<100mΩ  RDS(ON), [email protected],[email protected]<110mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead fre	Pan Jit International
PJW4N10	100V N-Channel MOSFET PPJW4N10 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 4A SOT-223 Features  RDS(ON), VGS@10V,ID@2A<258mΩ  RDS(ON), VGS@6V,ID@1A<268mΩ  Low On-Resistance  Low input capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive  Gre	Pan Jit International

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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