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PJS6416 データシート PDF

この部品の機能は「20v N-channel Enhancement Mode Mosfet」です。


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部品番号
PJS6416

20V N-Channel Enhancement Mode MOSFET


PPJS6416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 7.4A Features  RDS(ON) , [email protected], [email protected]<27mΩ  RDS(ON) , [email protected], [email protected]<41mΩ  RDS(ON) , [email protected], [email protected]<8


Pan Jit International
Pan Jit International

データシート pdf



文字列「 PJS6416 」「 6416 」で始まる検索結果です。

部品説明

5264165FTT75

HM5264165FTT75

HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940B (Z) Rev. 1.0 Nov. 10, 1999 Descr

Hitachi Semiconductor
Hitachi Semiconductor

 データシート pdf


AK6416A

16Kbit Serial CMOS EEPROM

ASAHI KASEI [AK6416A] AK6416A 16Kbit Serial CMOS EEPROM Features † ADVANCED CMOS EEPROM TECHNOLOGY † READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (1.8V ∼ 5.5V) operation - 16384 bits: 1024 Õ 16 organization † ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip mic

Asahi Kasei Microsystems
Asahi Kasei Microsystems

 データシート pdf


AON6416

N-Channel MOSFET

AON6416 30V N-Channel MOSFET SDMOS TM General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suite

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

 データシート pdf


AON6416

N-Channel MOSFET

AON6416 30V N-Channel MOSFET General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PW

Freescale
Freescale

 データシート pdf


AS81F641642C

1M x 16 Bit x 4 Banks SYNCHRONOUS DYNAMIC RAM

AS81F641642C ME MOR Y FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interle

ASMIC
ASMIC

 データシート pdf


AT49BV6416

Flash Memory

Features • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – One H

ATMEL Corporation
ATMEL Corporation

 データシート pdf

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