PJS6416 データシート PDFこの部品の機能は「20v N-channel Enhancement Mode Mosfet」です。 |
検索結果を表示する |
部品番号 |
PJS6416 20V N-Channel Enhancement Mode MOSFET PPJS6416 20V N-Channel Enhancement Mode MOSFET Voltage 20 V Current 7.4A Features RDS(ON) , [email protected], [email protected]<27mΩ RDS(ON) , [email protected], [email protected]<41mΩ RDS(ON) , [email protected], [email protected]<8 Pan Jit International |
文字列「 PJS6416 」「 6416 」で始まる検索結果です。 |
部品説明 |
5264165FTT75 HM5264165FTT75 HM5264165F-75/A60/B60 HM5264805F-75/A60/B60 HM5264405F-75/A60/B60 64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM ADE-203-940B (Z) Rev. 1.0 Nov. 10, 1999 Descr Hitachi Semiconductor |
AK6416A 16Kbit Serial CMOS EEPROM ASAHI KASEI [AK6416A] AK6416A 16Kbit Serial CMOS EEPROM Features † ADVANCED CMOS EEPROM TECHNOLOGY † READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (1.8V ∼ 5.5V) operation - 16384 bits: 1024 Õ 16 organization † ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip mic Asahi Kasei Microsystems |
AON6416 N-Channel MOSFET AON6416 30V N-Channel MOSFET SDMOS TM General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suite Alpha & Omega Semiconductors |
AON6416 N-Channel MOSFET AON6416 30V N-Channel MOSFET General Description The AON6416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PW Freescale |
AS81F641642C 1M x 16 Bit x 4 Banks SYNCHRONOUS DYNAMIC RAM AS81F641642C ME MOR Y FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interle ASMIC |
AT49BV6416 Flash Memory Features • 64-megabit (4M x 16) Flash Memory • 2.7V - 3.6V Read/Write • High Performance – Asynchronous Access Time – 70 ns – Page Mode Read Time – 20 ns Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – One H ATMEL Corporation |
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