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Datasheet PJQA6V8C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJQA6V8C | ESD Protection diode PJQA6V8C
ESD Protection diode VOLTAGE
FEATURES
• ESD Protection • Small mold type • Silicon epitaxial planar • In compliance with EU RoHS 2002/95/EC directives
5.0 Volts
POEWR
150 Watts
MECHANCALDATA
Case: SOT23-6L Molded plastic Terminals: Solder plated, solderable per MIL-STD-750, Meth |  Pan Jit International | diode |
PJQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJQ1900 | N-Channel Enhancement Mode MOSFET PPJQ1900
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
1.2 A
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directive. Pan Jit International mosfet | | |
| 2 | PJQ1901 | P-Channel Enhancement Mode MOSFET PPJQ1901
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-0.75A
Features
Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU
directiv Pan Jit International mosfet | | |
| 3 | PJQ1902 | N-Channel Enhancement Mode MOSFET PPJQ1902
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V Current 500mA
DFN3L
Features
RDS(ON) , [email protected], ID@350mA<1.2Ω RDS(ON) , [email protected], ID@200mA<1.6Ω RDS(ON) , [email protected], ID@80mA<2.3Ω RDS(ON) , [email protected], ID@10mA<2.5Ω(typ.) Specially Designed f Pan Jit International mosfet | | |
| 4 | PJQ2460 | N-Channel Enhancement Mode MOSFET PPJQ2460
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V Current
3.2A
Features
RDS(ON) , VGS@10V, [email protected]<75mΩ RDS(ON) , [email protected], [email protected]<90mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Lead free in comply with EU RoHS 201 Pan Jit International mosfet | | |
| 5 | PJQ2800 | N-Channel Enhancement Mode MOSFET PPJQ2800
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
5.2A
Features
RDS(ON) , [email protected], [email protected]<32mΩ RDS(ON) , [email protected], [email protected]<45mΩ RDS(ON) , [email protected], [email protected]<65mΩ Advanced Trench Process Technology High density cell design for ultra low on-resistance Pan Jit International mosfet | | |
| 6 | PJQ2815 | 20V P-Channel Enhancement Mode MOSFET PPJQ2815
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-4.2A
Features
RDS(ON) , [email protected], [email protected]<52mΩ RDS(ON) , [email protected], [email protected]<62mΩ RDS(ON) , [email protected], [email protected]<73mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Appl Pan Jit International mosfet | | |
| 7 | PJQ2888 | P-Channel Enhancement Mode MOSFET PPJQ2888
20V P-Channel Enhancement Mode MOSFET with TVS Diode
Voltage
-20 V Current
-1.5A
DFN2020-8L
Features
RDS(ON) , [email protected], [email protected]<325mΩ RDS(ON) , [email protected], [email protected]<420mΩ RDS(ON) , [email protected], [email protected]<600mΩ Advanced Trench Process Technology Specially Desi Pan Jit International mosfet | |
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