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Datasheet PJF20N65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PJF20N65 | 650V N-Channel MOSFETs 650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e |  Potens semiconductor | mosfet |
PJF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PJF10N60 | 600V N-Channel Enhancement Mode MOSFET PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I  Pan Jit International mosfet | | |
| 2 | PJF10N65 | 650V N-Channel Enhancement Mode MOSFET PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
| 3 | PJF12N65 | 650V N-Channel Enhancement Mode MOSFET PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS I Pan Jit International mosfet | | |
| 4 | PJF13N50 | 500V N-Channel Enhancement Mode MOSFET PJP13N50 / PJF13N50
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 13A , 500V, RDS(ON)=0.52Ω@VGS=10V, ID=6.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS Pan Jit International mosfet | | |
| 5 | PJF20N65 | 650V N-Channel MOSFETs 650V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect transistors are using advanced super junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e Potens semiconductor mosfet | | |
| 6 | PJF24N10 | 100V N-Channel Enhancement Mode MOSFET PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Syn Pan Jit International mosfet | | |
| 7 | PJF2N60 | 600V N-Channel Enhancement Mode MOSFET PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In com Pan Jit International mosfet | |
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