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Datasheet PJD882S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 PJD882S   NPN Epitaxial Silicon Transistor

PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING • • • Complement to PJB772 PW 10ms,Duty Cycle50%Pulse Test PW 350µ s, Duty Cycle 2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃) Characteristic Collect
 ETC
ETC		 datasheet PJD882S pdf

PJD8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
PJD80N06

60V N-Channel Enhancement Mode MOSFET

PPJD80N06 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 80 A Features  RDS(ON) , VGS@10V, ID@20A<7mΩ  High switching speed  Improved dv/dt capability  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
Pan Jit International
Pan Jit International		 datasheet pdf - Pan Jit International
PJD882

NPN Epitaxial Silicon Transistor

PJD882/PJD882S NPN Epitaxial Silicon Transistor AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING • • • Complement to PJB772 PW 10ms,Duty Cycle50%Pulse Test PW 350µ s, Duty Cycle 2% TO-92 TO-126 ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃) Ch
 ETC
ETC		 datasheet pdf - ETC
PJD8NA50

500V N-Channel MOSFET

PPJU8NA50 / PJD8NA50 / PJP8NA50 / PJF8NA50 500V N-Channel MOSFET Voltage 500 V Current 8A Features  RDS(ON), VGS@10V,ID@4A<0.9Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance wit
 Pan Jit International
Pan Jit International		 datasheet pdf - Pan Jit International


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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