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Datasheet PJ4N3KDW Equivalent ( PDF ) |
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1 | PJ4N3KDW | 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected PJ4N3KDW
30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• RDS(ON), [email protected],IDS@1mA=7.0Ω • RDS(ON), [email protected],IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating in |
Pan Jit International |
PJ4N3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
PJ4N3KDW | 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected |
Pan Jit International |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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