Datasheet PHX1N60E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHX1N60E	PowerMOS transistor Isolated version of PHP1N60E Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high	NXP Semiconductors

PHX1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHX1N60E	PowerMOS transistor Isolated version of PHP1N60E Philips Semiconductors Objective Specification PowerMOS transistor Isolated version of PHP1N60E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fas	NXP Semiconductors
PHX1N50E	PowerMOS transistor Isolated version fo PHP1N50E Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fas	NXP Semiconductors
PHX1N40E	PowerMOS transistor Isolated version of PHP2N40E Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP2N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fas	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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