Datasheet PHT1N52S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHT1N52S	PowerMOS transistor Philips Semiconductors Objective specification PowerMOS transistor PHT1N52S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hig	NXP Semiconductors

PHT1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHT1N60R	PowerMOS transistor Philips Semiconductors Objective specification PowerMOS transistor PHT1N60R GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fa	NXP Semiconductors
PHT1N52S	PowerMOS transistor Philips Semiconductors Objective specification PowerMOS transistor PHT1N52S GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fa	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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