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Datasheet PHN203 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PHN203 | Dual N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
Dual N-channel enhancement mode TrenchMOSTM transistor
FEATURES
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package
PHN203
SYMBOL
d1 d1 d2 d2
QUICK REFERENCE DATA
VDS = 25 V ID = 6.3 A RDS |  NXP Semiconductors | transistor |
PHN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PHN1011 | TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low-profile surface mount package • Logic level compatible
PHN1011
SYMBOL
d
QUICK R NXP Semiconductors transistor | | |
| 2 | PHN1013 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
PHN1013 N-channel enhancement mode MOS transistor
Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors
Objective specification
N-channel enhancement mode MOS transistor
FEATURES • Very low on-state resistance NXP Semiconductors transistor | | |
| 3 | PHN1015 | N-channel TrenchMOS transistor Logic level Philips Semiconductors
Product specification
N-channel TrenchMOS transistor Logic level
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible
PHN1015
SYMBOL
d
QUICK REFERENCE DATA VDSS = 25 V ID = NXP Semiconductors transistor | | |
| 4 | PHN1018 | N-channel TrenchMOS transistor Logic level FET Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible
PHN1018
SYMBOL
d
QUICK REFERENCE DATA VDSS = 25 V I NXP Semiconductors transistor | | |
| 5 | PHN103 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
PHN103 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1996 Nov 12 File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES • Hi NXP Semiconductors transistor | | |
| 6 | PHN110 | N-channel enhancement mode MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
PHN110 N-channel enhancement mode MOS transistor
Product specification Supersedes data of 1996 Jul 16 File under Discrete Semiconductors, SC13b 1997 Jun 17
Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES • Hi NXP Semiconductors transistor | | |
| 7 | PHN203 | Dual N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
Dual N-channel enhancement mode TrenchMOSTM transistor
FEATURES
• Dual device • Low threshold voltage • Fast switching • Logic level compatible • Surface mount package
PHN203
SYMBOL
d1 d1 d2 d2
QUICK REFERENCE DATA
VDS = 25 V ID = 6.3 A RDS NXP Semiconductors transistor | |
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