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Datasheet PHI214-25L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PHI214-25L | Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz = =z
an AMP company
SC= z
=
Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz
v2.00
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter B | Tyco Electronics | transistor |
PHI Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PHI214-0851 | Radar Pulsed Power Transistor/ 0.85W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz ,z== i--s L-J =7 f
.------
z z = =
*
an AMP company
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry Diffused Emirter Ballasting Resistor Tyco Electronics transistor | | |
2 | PHI214-20EL | Radar Pulsed Power Transistor/ 2OW/ 2ms Pulse/ 10% Duty 1.2 - 1.4 GHz *
an AMP company
-F--z = -=-=c
=z z .-----= = E
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz PHI 214-20EL
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffus Tyco Electronics transistor | | |
3 | PHI214-25L | Radar Pulsed Power Transistor/ 25W/ 300ms Pulse/ 10% Duty 1.2 - 1.4 GHz = =z
an AMP company
SC= z
=
Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty PHI 214-25L 1.2 - 1.4 GHz
v2.00
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter B Tyco Electronics transistor | | |
4 | PHI214-25S | Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz an AMP
comnanv
Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty PHI21 4-25s 1.2 - 1.4 GHz
v2.00
Features ----- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold M Tyco Electronics transistor | | |
5 | PHI214-30EL | Radar Pulsed Power Transistor/ 3OW/ 1 .Oms Pulse/ 10% Duty . 1.2 - 1.4 GHz an
AMP
company
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty PHI 214-30EL . 1.2 - 1.4 GHz
v2.00
Features _-.-- - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization Syste Tyco Electronics transistor | | |
6 | PHI214-6M | Radar Pulsed Power Transistor/ SW/ looms Pulse/ 10% Duty 1.2 - 1.4 GHz an AMP company
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Inpu Tyco Electronics transistor | | |
7 | PHI516160 | Wireless Bipolar Power Transistor/ 60W 1450 - 1550 MHz *
z-,-3 y--z =: .---------= z =z = an AMP company
Wireless Bipolar Power Transistor, 1450 - 1550 MHz
Features
Designed for Linear Amplifier Applications Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP Class A: +53 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedanc Tyco Electronics transistor | |
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Número de pieza | Descripción | Fabricantes | |
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