Datasheet PHD3N40E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	PHD3N40E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK RE	NXP Semiconductors

PHD3N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
PHD3N40E	PowerMOS transistors Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E	NXP Semiconductors
PHD3N20L	PowerMOS transistor Logic level FET Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable block	NXP Semiconductors
PHD3N20E	PowerMOS transistor Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast	NXP Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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