PHD27NQ10T データシート PDFこの部品の機能は「N-channel Trenchmos Transistor」です。 |
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部品番号 |
PHD27NQ10T N-channel TrenchMOS transistor Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP27NQ10T, PHB27NQ10T PHD27NQ10T QUICK REFERENCE DATA d FEATURES • ’Trench’ technology • Low on-state resist NXP Semiconductors |
文字列「 PHD27NQ10 」「 27NQ10T 」で始まる検索結果です。 |
部品説明 |
2N2710 NPN Small Signal High Speed Low Power Saturating Switch Transistor Fairchild |
2SC2710 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter Toshiba Semiconductor |
2SK2710 MOSFET ( Transistor ) 2SK2710 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 600 ± 30 ± 12 ± 48 85 (Tc = 25ºC) 400 12 150 –55 to +150 (Ta = 25ºC) External dimensions 2 ...... FM100 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A º Sanken electric |
AD2710 +(-) 10.000 Volt Ultrahigh Precision Reference Series Analog Devices |
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BYV27100 2.0A SUPER-FAST GLASS BODY RECTIFIER BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features · · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Ratin Diodes Incorporated |
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